Graphene is considered a promising material for high frequency devices because of the high saturation velocity, the broadband optical adsorption, and the high mechanical robustness. In this work, we focus on graphene based field effect transistors (GFETs) for flexible applications. Large scale graphene obtained by chemical vapor deposition (CVD) is used as a channel material for back-gated GFETs realized on Kapton. We fully characterize the graphene and the devices performances from DC up to 67 GHz, the devices show state of the art extrinsic performances, with ft/fmax up to 39/16 GHz. The performances are stable against static bending, moreover the cutoff frequencies' variations remain below 15% even after a fatigue test consisting of 1000 bending cycles. Finally, we highlight the importance of thermal effects by measuring infrared temperature mapping for different devices under bias. These results on state of the art flexible GFETs demonstrates mechanical robustness and stability upon heating, two important elements to assess the potential of GFETs for flexible electronics.

reference: W Wei et al. Nanoscale 8 (29), 14097-14103