Vietnam 2017

   Nanophysics, from fundamental to applications : reloaded

30 Jul-5 Aug 2017 Quy Nhon (Vietnam)

 

ICISE

Formalism of temperature-driven adiabatic charge pumping via a single level quantum dot in coherent transport region
Masahiro Hasegawa  1@  
1 : Institute for Solid State Physics, The University of Tokyo  (ISSP)  -  Website
5-1-5 Kashiwanoha, Kashiwa, Chiba Japan 277-8581 -  Japan

Recently, temperature-driven adiabatic pumping induced by reservoir parameters, i.e. temperatures and electrochemical potentials, has been investigated from a viewpoint of nonequilibrium thermodynamics. However, temperature-driven pumping has mostly been formulated in quantum Master equation method[1], which is applicable in the in the weak system-reservoir coupling region. Such formalism cannot capture quantum effects induced by strong system-reservoir coupling, e.g. Kondo resonance. To clarify how such quantum effects affect temperature-driven pumping, we study temperature-driven adiabatic charge pumping via a single level quantum dot system in the strong system-reservoir coupling region[2]. We introduce thermomechanical field method to treat time-dependent reservoir temperatures. As the first step, we construct formalism of adiabatic charge pumping applicable to arbitrary strength system-reservoir coupling and Coulomb interaction. By our formalism, adiabatic charge pumping is described by Berry connection in driving parameter space and this Berry connection is found to be closely related to dynamic conductance. Also, by considering low frequency limit of the dynamic conductance, we clarify adiabatic pumping is understood in terms of delayed response of the quantum dot.

[1] J. Ren, P. Hänggi and B. Li, Phys. Rev. Lett. 104, 170601 (2010).

[2] M. Hasegawa and T. Kato, J. Phys. Soc. Jpn. 86, 024710 (2017).


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