Vietnam 2017

   Nanophysics, from fundamental to applications : reloaded

30 Jul-5 Aug 2017 Quy Nhon (Vietnam)

 

ICISE

Top-gating control of the 2-DEG at the LAO/STO interface
Cheryl Feuillet-Palma  1@  
1 : Laboratoire de Physique et d'Etude des Matériaux  (LPEM)  -  Website
Université Pierre et Marie Curie (UPMC) - Paris VI, CNRS : UMR8213, ESPCI ParisTech
10 rue Vauquelin, 75231 Paris cedex 05 -  France

Transition metal oxides display a great variety of quantum electronic behaviors where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to engineer artificial materials where new electronic orders take place. The recent discovery [1-3] of a superconducting two-dimensional electron gas (2DEG) at the interface of insulating oxides such as SrTiO3/LaAlO3 or LaTiO3/SrTiO3 provide a unique system in which superconducting to insulating transition can be continuously controlled using a back gate. In addition, those 2DEG present a field-effect-tunable strong Rashba spin-orbit coupling. Thus they naturally combine all the ingredients to host topological states.

In this presentation, we report the local control of superconducting properties and Rashba spin-orbit coupling with top gated [4,5], in device based on LaAlO3/SrTiO3 oxides interfaces. Finally, we will discuss the recent results on local control of the metallic 2DEG at even shorter scales with top gates in a quantum point contact geometry. This study paves the way for an accurate control of the 2DEG at oxides interfaces at mesoscopic scales.

 

 

 

 

[1] N. Reyren, S. Thiel, A. D. Caviglia, L. F. Kourkoutis, G. Hammerl, C. Richter, C. W. Schneider, T. Kopp, A. S. Ruetschi, D. Jaccard, M. Gabay, D. A. Muller, J. M. Triscone, and J. Mannhart, Science 317, 1196 (2007).

[2] J. biscaras, N. Bergeal, A. Kushwaha, T. Wolf, A. Rastogi, R. C. Budhani, and J. Lesueur, Nature Communications 1, 1 (2010).

[3] J. biscaras, N. Bergeal, S. Hurand, C. Grossetête, A. Rastogi, R. C. Budhani, D. LeBoeuf, C. Proust, and J. Lesueur, Physical Review Letters 108, 247004 (2012).

[4] S. Hurand, A. Jouan, C. Feuillet-Palma, G. Singh, E. Lesne, N. Reyren, A. Barthélémy, M. Bibes, J. E. Villegas, C. Ulysse, M. Pannetier-Lecoeur, M. Malnou, J. Lesueur, and N. Bergeal, Appl. Phys. Lett. 108, 052602 (2016).

[5] S. Hurand, A. Jouan, C. Feuillet-Palma, G. Singh, J. biscaras, E. Lesne, N. Reyren, A. Barthélémy, M. Bibes, J. E. Villegas, C. Ulysse, X. Lafosse, M. Pannetier-Lecoeur, S. Caprara, M. Grilli, J. Lesueur, and N. Bergeal, Sci. Rep. 1 (2015).



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